Product Highlights
- Substrate: semiconductor-grade isotropic graphite, ρ= 1.80 g cm³, ash ≤20 ppm, grain size <5 µm.
- CVD β-SiC layer: 50–200 µm, 3-C structure, density 3.2 g cm³, metallic impurities ≤5 ppm (Na, K, Fe each <0.1 ppm).
- Surface finish: Ra ≤0.3 µm as-coated; final polish available to ≤0.05 µm.
- Thermal-cycle rating: 190–250 runs between 25℃ and 1,400℃without spallation or >5 % weight loss.
Advantages Delivered by HAROG’s Integrated Route
• End-to-end in-house control
Purification, precision machining, CVD coating and metrology performed in a single 80,000 ㎡campus; eliminates lot-to-lot variance caused by multi-vendor hand-offs.
• Proprietary CVD furnace design
Self-built reactors accommodate jumbo fixtures (up to 1.2 m Ø) while maintaining ±5 µm thickness uniformity and a “no-contact-point”holder, preventing shadow defects and reducing downstream particle counts by >30 %.
• Class 1,000/10,000 clean rooms
Coating, inspection and packaging executed under laminar flow; guaranteeing that parts meet the <10 particles @ 0.2 µm per wafer-pass requirement for 300 mm epi lines.
• Comprehensive characterization suite
In-house XRD, SEM/EDS, ICP-MS, thermal-shock rig and oxidation furnace enable full validation of crystal phase, stoichiometry, density, flexural strength (150 MPa) and thermal-shock life (≥190 cycles) on every batch; certificates accompany each shipment.
• Cost & lead-time leverage
Vertical integration plus local supply chain cuts typical 12-week CVD-SiC delivery to 4–6 weeks and lowers COO by ~25 % versus U.S./EU sources, without compromising purity or cycle lifetime.
Technical Parameters
Datasheet of Harog’s Water Electrolysis SiC Coated Graphite Parts
Parameter | Unit | Data |
Crystal structure | / | 3-C SiC |
Bulk density | g/cm³ | 3.2 |
Coating thickness | μm | Customized |
Impurity content | ppm | ≤5 |
Thickness uniformity | μm | ±5 |
Roughness | μm | ≤3.0 |
Flexural strength | MPa | 150 |
Elastic modulus | GPa | 300 |
Thermal shock cycles | run | 190-250 |
Field-Proven Applications
• Si epi: 36-pocket susceptor for 300 mm reactors—wafer T uniformity ±1 nm at 1,150℃, extending epi carrier lifetime to >200 µs.
• SiC epi: single and multi-wafer carriers withstand 1,650℃, 100 mbar H₂ ambient; 200 runs before re-coat, matching the long runs demanded by 200 mm SiC power-device fabs.
• MOCVD (LED): 18- and 36-wafer planetary holders maintain pocket flatness <10 µm, enabling wavelength uniformity σ<1 nm for high-brightness GaN.
• Ion implant & RTP: beam apertures, edge rings and rapid-ramp susceptors survive 1 kW cm⁻² instantaneous load with <0.5 µm erosion per 100 h, cutting particle generation and metal dose by half compared with bare graphite.
• Solar, aerospace and nuclear: customized heaters, crucibles and crucible supports benefit from the coating’s oxidation weight-gain <1 mg cm²after 100 h at 1,200℃ in air.
By fusing an ultra-pure CVD-SiC skin with a machinable, high-conductivity graphite core—and by controlling every critical step under one roof—HAROG Technology delivers SiC-coated parts that extend tool uptime, tighten process windows and meet the contamination budgets of sub-3 nm nodes, all with shorter lead times and lower cost.
