Semiconductor Graphite Raw Materials

Harog Technology is one of the biggest suppliers of semiconductor graphite parts suppliers in China. With 100,000 m2 of workshop and 500+ employees, Harog Technology has continually created value for our clients for years, while protecting the intellectual property of relative parties. We are already suppliers to both domestic and international known brands in the business and feedback has always been positive.

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Product Description

Product Advantage

• Self-owned raw materials in premium quality

• Proprietary coating and purification technologies

• Full-spectrum machining operations and comprehensive quality control measures

Technical Parameters

Datasheet of Harog’s Semiconductor Graphite Raw Material

SKU	Density	Electrical Resistivity	Flexural Strength	Compressive Strength	Shore Hardness	Thermal Conductivity	CTE (RT~600℃）	Porosity
SKU	g/cm3	μΩ·m	MPa	MPa	HSD	W/(m·K)	x10-6/℃	%
HA09	1.91	9.9	46	105	61	123	4.6	10
HA11	1.86	9.3	38.3	75.5	44	128	4.4	10
HA12	1.93	9.9	56	110	64	137	5.7	8.7
HA13	1.79	12	26.1	64.8	42.9	117	4.2	12
HA13+	1.78	8.8	55	75	45	135	3.6	13
HA14	1.88	14	68.6	115.7	63.9	90	5	8.6
HA15	1.87	12.7	58	117	62	120	4.8	11
HA16	1.77	9.1	46	67	35.6	130	4.15	18

Product Features

- Ultra-high purity (≥99.999 %) guarantees minimal contamination during crystal growth.

- Controlled particle size (1–5 µm) ensures batch-to-batch uniformity and stable rheology in coatings and fillers.

- Intrinsic layered crystal structure delivers excellent in-plane electrical (∼2×10⁴ S m⁻¹) and thermal conductivity (∼100–120 W m⁻¹ K⁻¹).

- Density 2.09–2.23 g cm⁻³ and Mohs hardness 1–2 allow light-weight, easy-to-machine components with tight dimensional tolerances.

Technical Advantages

- Melting point >3 650 °C and inertness to HF, HNO₃ and most plasma chemistries secure reliable performance in extreme semiconductor process environments.

- Low thermal-expansion coefficient (<3×10⁻⁶ K⁻¹ at 20–200 °C) minimizes thermally induced distortion in lithography and epitaxy fixtures.

- Homogeneous, isotropic synthetic microstructure eliminates natural graphite impurities, enabling <5 ppm total ash content and consistent electrical resistivity for susceptor heating.

- Tailorable surface chemistry—SiC, pyrolytic carbon or anti-oxidation coatings—extends service life in CVD, ion implant and etch chambers.

Specific Applications

- Crystal growth: crucibles, heaters and heat shields for Czochralski (Si) and PVT (SiC) furnaces.

- Epitaxy & CVD: SiC-coated susceptors providing uniform temperature distribution for Si and SiC epi layers.

- Plasma etch: high-purity electrodes and rings generating stable plasma fronts with reduced particle generation.

- Ion implantation: graphite apertures and beam-line components resisting sputter erosion at high dose rates.

- Wafer processing: rigid trays and boats for high-temperature annealing, ensuring warp-free substrate support.

These attributes make semiconductor-grade graphite an enabling material for advanced nodes (≤5 nm), power devices, and high-brightness LEDs, where contamination control, thermal precision, and chemical durability are mission-critical.