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Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD
Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD
Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD
Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD
Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD
Graphite Wafer Carrier for MOCVD Graphite Wafer Carrier for MOCVD

Graphite Wafer Carrier for MOCVD

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As the market for compound semiconductor devices such as GaAsMMIC, InPMMIC, and GaN blu-ray LED continues to expand, the demand of MOCVD systems continues to grow.
Product Description

In the epitaxial coating process of MOCVD reaction equipment, the performance of MOCVD base material has a very important influence on the coating. The choice of susceptor graphite material and the processing technology have a close influence on the SiC coating. Factors including material purity, hardness, coefficient of thermal expansion and thermal conductivity are all very important.



Data Sheet of Graphite Wafer Carrier for MOCVD


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